Elements of Electromigration Electromigration in 3D IC technology

In this invaluable resource for graduate students and practicing professionals, Tu and Liu provide a comprehensive account of electromigration and give a practical guide on how to manage its effects in microelectronic devices, especially newer devices that make use of 3D architectures.

In the era of big data and artificial intelligence, next-generation microelectronic devices for consumers must be smaller, consume less power, cost less, and, most importantly, have higher functionality and reliability than ever before. However, with miniaturization, the average current density increases, and so does the probability of electromigration failure. This book covers all critical elements of electromigration, including basic theory, various failure modes induced by electromigration, methods to prevent failure, and equations for predicting mean-time-to-failure. Furthermore, effects such as stress, Joule heating, current crowding, and oxidation on electromigration are covered, and the new and modified mean-time-to-failure equations based on low entropy production are given. Readers will be able to apply this information to the design and application of microelectronic devices to minimize the risk of electromigration-induced failure in microelectronic devices.

This book essential for anyone who wants to understand these critical elements and minimize their effects. It is particularly valuable for both graduate students of electrical engineering and materials science engineering and engineers working in the semiconductor and electronic packaging technology industries.

1. Introduction 2. Driving forces of electromigration 3. Kinetics of electromigration 4. Damage of electromigration 5. Irreversible processes 6. Effect of stress on electromigration 7. Effect of current crowding on electromigration 8. Effect of Joule heating on electromigration 9. Effect of Oxidation on Electromigration 10. Modified Mean-Time-to-Failure Equations

King-Ning Tu is Professor Emeritus at UCLA and Chair Professor of Materials and Electrical Engineering of City University of Hong Kong. Professor Tu received his BSc degree from National Taiwan University, MSc degree from Brown University, and PhD degree on applied physics from Harvard University in 1960, 1964, and 1968, respectively. Professor Tu is a world leader in the science of thin films, especially in their applications in microelectronic devices, packaging, and reliability.

Dr. Yingxia Liu is an Assistant Professor at City University of Hong Kong. Dr. Liu received her Ph.D. from the Department of Materials Science and Engineering, University of California, Los Angeles in 2016 and her Bachelor’s degree from the College of Chemistry and Molecular Engineering, Peking University in 2012.