Broadband RF and Microwave Amplifiers
Auteurs : Grebennikov Andrei, Kumar Narendra, Yarman Binboga S.
Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then:
- Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth
- Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process
- Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications
Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
Two-Port Network Parameters. Power Amplifier Design Principles. Lossless Matched Broadband Power Amplifiers. Lossy Matched and Feedback Broadband Power Amplifiers. Design of Wideband RF and Microwave Amplifiers Employing Real Frequency Techniques. High-Efficiency Broadband Class-E Power Amplifiers. Broadband and Multiband Doherty Amplifiers. Low-Noise Broadband Amplifiers. Distributed Amplifiers. CMOS Amplifiers for UWB Applications.
Andrei Grebennikov earned his engineering diploma in radio electronics from the Moscow Institute of Physics and Technology, Russia, and his Ph.D in radio engineering from the Moscow Technical University of Communications and Informatics, Russia. He worked as an engineer, researcher, lecturer, and educator at Moscow Technical University of Communications and Informatics, Russia; Institute of Microelectronics, Singapore; M/A-COM, Ireland; Infineon Technologies, Germany/Austria; Bell Labs, Alcatel-Lucent, Ireland; and Microsemi Corporation, USA. He served as a guest professor at the University of Linz, Austria, and as an invited speaker at the IEEE International Microwave Symposia, European and Asia-Pacific Microwave Conferences; Institute of Microelectronics, Singapore; Motorola Design Centre, Malaysia; Tomsk State University of Control Systems and Radioelectronics, Russia; and RWTH Aachen University, Germany. A senior member of the IEEE, he has authored and coauthored eight books and more than 100 papers, and has 25 European and U.S. patents and patent applications.
Narendra Kumar earned his Ph.D in electrical engineering from RWTH Aachen University, Germany. He worked in R&D at Motorola Solutions, USA, as a principal staff engineer. He has several U.S. patents, all assigned to Motorola Solutions, in the area of radio frequency (RF) and microwave amplifier circuitry. Currently, he is an associate professor in the Department of Electrical Engineering at the University of Malaya, Kuala Lumpur, Malaysia. He is also an appointed visiting professor at Istanbul University, Turkey. He has authored and coauthored more than 50 papers in technical journals and conferences, and two international books. He has conducted seminars related to RF and microwave power amplifiers in Europe and Asia Pacific. He is a fellow of the IET, a senior member of the IEEE, and an appointed member of the IEEE Industry Relations Team of Asia Pacific.<
Date de parution : 07-2017
17.8x25.4 cm
Date de parution : 10-2015
17.8x25.4 cm
Thèmes de Broadband RF and Microwave Amplifiers :
Mots-clés :
GaN HEMT; Ultra Wideband Applications; Power Amplier; UWB Applications; Noise Gure; Complementary Metal-Oxide Semiconductor Amplifiers; Center Bandwidth Frequency; CMOS Amplifiers; Matching Circuits; Distributed Amplifiers; Equivalent Circuit; Low-Noise Broadband Amplifiers; Electrical Length; Multiband Doherty Amplifiers; Characteristic Impedances; Broadband Doherty Amplifiers; Input Return Loss; High-Efficiency Broadband Class-E Power Amplifiers; Matching Network; Real Frequency Techniques; Transistor M1; Wideband Microwave Amplifier Design; Transmission Line Transformer; Wideband Radio Frequency Amplifier Design; GaN HEMT Device; Wideband RF Amplifier Design; Series Transmission Line; Lossy Matched Feedback Broadband Power Amplifiers; Input Matching; Lossy Matched Broadband Power Amplifiers; Frequency Bandwidth; Lossless Matched Broadband Power Amplifiers; Output Power; Broadband Power Amplifiers; FET Device; Power Amplifier Design Principles; UWB Band; Two-Port Network Parameters; Power Consumption; Microwave Amplifier Design; Offset Line; Microwave Amplifiers; UWB Bandwidth; Radio Frequency Amplifiers; Mim Capacitor; Radio Frequency Amplifier Design; Articial Transmission Lines; RF Amplifier Design; Shunt Capacitance; RF Amplifiers; Broadband Amplifier Design; Broadband Amplifiers